The use of the hydrogenated surface of silicon is hampered by its chemical instability by surface oxidation. The researchers have attempted to modify this surface by direct grafting through the establishment of covalent silicon-carbon bonds from the reaction of chemical species on the surface. Different grafting methods can be implemented for the preparation of grafted surfaces. The choice of an electrochemical reaction allows fast grafting from the hydrogenated surface. We studied the formation of a phenyl layer by electrochemical reduction of aryl diazonium salts (BF4-,+N2-ph-OCH3) on a p-Si-H (111) electrode in an aqueous medium (0.05M H2SO4 + 0.05M HF). The grafting of an organic layer by reduction is confirmed by the observation of a cyclic voltammetry peak around -0.3V/SCE. In-situ infrared spectroscopy (IR) analysis allows to identify the chemical functions present on the grafted surface, allowing a direct monitoring of the grafting reaction.

Abdelkader Kaiber, Mohammed Cherkaoui, Jean-Noel Chazalviel, François Ozanam